Nonvolatile memory and operation method thereof

A non-volatile, method-of-operation technology, applied in the direction of electric solid-state devices, semiconductor devices, static memory, etc., can solve problems such as reading errors

Active Publication Date: 2012-01-11
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Another object of the present invention is to overcome the defects of the existing non-volatile memory and provide a new non-volatile memory. The technical pro

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  • Nonvolatile memory and operation method thereof
  • Nonvolatile memory and operation method thereof
  • Nonvolatile memory and operation method thereof

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Embodiment Construction

[0062] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation and structure of the non-volatile memory and its operation method proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , method, step, feature and effect thereof, detailed description is as follows.

[0063] figure 2 It is a flowchart of a non-volatile memory programming method according to an embodiment of the present invention. Wherein, the programming method described in this embodiment is applicable to a multi-level memory cell having a first storage location and a second storage location. also, Figure 3A to Figure 3C It is a schematic diagram of the representation method of the multi-level memory cell in this embodiment. Wherein, the multi-level memory cell has a source region, a drain region, a charge storage struct

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Abstract

The invention relates to a nonvolatile memory and an operation method thereof. The operation method of the nonvolatile memory is applicable to a multilevel memory cell with a first storage position and a second storage position and comprises the following steps of: setting a main voltage distribution group and a plurality of sub voltage distribution groups, wherein the main voltage distribution group and the sub voltage distribution groups respectively comprise N critical voltage distribution curves, and N is an integer greater than 2; selecting a first operation level and a second operation level according to programming instructions; programming the first storage position according to the critical voltage distribution curves corresponding to the first operation level in the main voltage distribution group; and selecting one voltage from the sub voltage distribution groups according to the first operation level and programming the second storage position according to the critical voltage distribution curves corresponding to the second operation level in the selected sub voltage distribution groups.

Description

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Claims

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Application Information

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Owner MACRONIX INT CO LTD
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