Semiconductor device structure and method for manufacturing same

A device structure, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as not too many changes, different metal alloys, etc.

Inactive Publication Date: 2012-05-16
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, there are some drawbacks in the above-mentioned method of fabricating semiconductor device structures: on the one hand, for NMOS and PMOS, since the requirements for metal gate performance are different, the metal alloys used for these

Method used

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  • Semiconductor device structure and method for manufacturing same
  • Semiconductor device structure and method for manufacturing same
  • Semiconductor device structure and method for manufacturing same

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Embodiment Construction

[0051] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0052] It should be noted that the terminology used here is only for describing specific embodiments, and is not intended to limit the exemplary embodiments according to the present invention. As used herein, singular forms are intended to include plural forms unless the context clearly dictates otherwise. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates the presence of the features, integers, steps, operations, means and / or components, but does not exclude the presence

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Abstract

The invention provides a semiconductor device structure and a method for manufacturing the same, wherein the method is characterized in merging a high dielectric constant/metal gate core device and a SiON/polysilicon gate input-output device. In the sub 45 nanometers CMOS (complementary metal oxide semiconductor) technology, when the SiON/polysilicon gate technology is used for the input-output device, the high dielectric constant/metal gate is adopted for the core device. According to the method provided by the invention, the traditional SiON/polysilicon gate input-output device and the high dielectric constant/metal gate core device can be merged effectively, thus the integral performances of the semiconductor device can be improved, and the technology process can be simplified.

Description

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Claims

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Application Information

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Owner SEMICON MFG INT (SHANGHAI) CORP
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