Quick preparation method of SERS (surface-enhanced Raman scattering) active substrate with three-dimensional nano porous structure

[0021] Clean the conductive glass substrate with ethanol, acetone, and deionized water in sequence, and finally dry it with nitrogen. Gold films and silver films of 200nm and 200nm were vapor-deposited on the surface of the conductive glass substrate in turn, and the substrate was placed in a tube furnace with an annealing temperature of 100°C and an annealing time of 15 minutes. The annealed substrate was etched in 10% nitric acid for 10 minutes, and the temperature of the water bath was kept at 20°C. After the substrate was taken out, it was washed with ultrapure water and dried with nitrogen gas to obtain a SERS active substrate chip.

[0023] Clean the conductive glass substrate with ethanol, acetone, and deionized water in sequence, and finally dry it with nitrogen. Gold and silver films of 100nm and 200nm were vapor-deposited on the surface of the conductive glass substrate in sequence, and the substrate was placed in a tube furnace with an annealing temperature of 150°C and an annealing time of 20 minutes. The annealed substrate was etched in 15% nitric acid for 5 minutes, and the temperature of the water bath was kept at 30°C. After the substrate was taken out, it was washed with ultrapure water and dried with nitrogen gas to obtain a SERS active substrate chip.