Rare-earth doped crystalline silicon, preparation method thereof and solar cell

[0031] The present invention also provides a preparation method of rare earth-doped crystalline silicon, comprising the following steps:

[0032] A) mixing rare earth elements and silicon materials, and then growing crystals after melting to obtain crystalline silicon ingots;

[0033] The silicon material is N-type crystalline silicon material or P-type crystalline silicon material, and the rare earth element is one or more of erbium, thorium, cerium, ytterbium and thulium;

[0034] The doping amount of the rare earth element is 0.01ppba~1000ppba;

[0035] B) annealing the crystalline silicon ingot at 1000-1370° C. for 0.5-5 hours to obtain rare earth-doped crystalline silicon.

[0036] In the present invention, rare earth elements are mixed with silicon materials, and crystal growth is carried out after melting to obtain crystalline silicon ingots. In the present invention, the silicon materials are preferably N-type crystalline silicon or P-type crystalline silicon, and the N-

[0048] Mix 1g of erbium with 800kg of P-type crystalline silicon, melt it at 1500°C, and grow the molten mixed silicon material at 1420°C to obtain a polycrystalline silicon ingot;

[0049] The polycrystalline silicon ingot was annealed at 1000° C. for 1 hour to obtain a crystalline silicon wafer.

[0050] In the present invention, the crystalline silicon wafer of this embodiment is made into a solar cell, and the photoelectric conversion efficiency of the solar cell is tested. The results show that the photoelectric conversion efficiency of the solar cell obtained in this embodiment is improved by 0.1%, and the wavelength range of absorption is 400~1400nm.

[0052] Mix 2g of thorium with 1000kg of N-type crystalline silicon, melt it at 1600°C, and grow the molten mixed silicon material at 1430°C to obtain a polycrystalline silicon ingot;

[0053] The polycrystalline silicon ingot was annealed at 1200° C. for 1 hour to obtain a crystalline silicon wafer.

[0054] In the present invention, the crystalline silicon wafer of this embodiment is made into a solar cell, and the photoelectric conversion efficiency of the solar cell is tested. The results show that the photoelectric conversion efficiency of the solar cell obtained in this embodiment is improved by 0.1%, and the wavelength range of absorption is 400~1400nm.