N-type single-sided cell preparation method

[0025] A method for preparing an N-type single-sided battery, comprising the following steps:

[0026] 1) For N-type silicon chip texturing, the solution used for texturing is composed of the following components in weight percentage: 5% sodium hydroxide, 10% isopropanol, 1% silicon fluoride, and the balance is ammonia containing 3%wt ammonia;

[0027] 2) Use HCl solution with molar concentration of 5 mol / L, HF solution with 5 mol / L and HPO with 6 mol / L in sequence 3 solution cleaning;

[0028] 3) Preparation of POCl 3 mixed solution, the POCl 3 The mixed solution is composed of the following weight percentages: POCl 3 50%, HCl 5%, HPO 3 10%, V 2 o 5 0.5%, the balance is water;

[0029] 4) Paste SiO doped with 5% mass fraction on the back of the cleaned silicon wafer 2 the SiN mask, put the POCl 3 The mixture was placed in a diffusion furnace and heated at 300 °C for 60 minutes;

[0030] 5) Cool down, take out the silicon wafer after phosphorus diffusion, and

[0034] A method for preparing an N-type single-sided battery, comprising the following steps:

[0035] 1) For N-type silicon chip texturing, the solution used for texturing is composed of the following components in weight percentage: 10% sodium hydroxide, 15% isopropanol, 2% silicon fluoride, and the balance is ammonia containing 5%wt ammonia;

[0036] 2) Use HCl solution with molar concentration of 8 mol / L, HF solution with 10 mol / L and HPO with 8 mol / L in sequence 3 solution cleaning;

[0037] 3) Preparation of POCl 3 mixed solution, the POCl 3 The mixed solution is composed of the following weight percentages: POCl 3 70%, HCl 15%, HPO 3 20%, V 2 o 5 1%, the balance is water;

[0038] 4) Paste SiO doped with 10% mass fraction on the back of the cleaned silicon wafer 2 the SiN mask, put the POCl 3 The mixture was placed in a diffusion furnace and heated at 500°C for 30 min;

[0039] 5) Cool down, take out the silicon wafer after phosphorus diffusion, and clea

[0043] A method for preparing an N-type single-sided battery, comprising the following steps:

[0044] 1) For N-type silicon chip texturing, the solution used for texturing is composed of the following components in weight percentage: 5% sodium hydroxide, 10% isopropanol, 1% silicon fluoride, and the balance is ammonia containing 4%wt ammonia;

[0045] 2) Use HCl solution with molar concentration of 6 mol / L, HF solution with 8 mol / L and HPO with 7 mol / L in sequence 3 solution cleaning;

[0046] 3) Preparation of POCl 3 mixed solution, the POCl 3 The mixed solution is composed of the following weight percentages: POCl 3 60%, HCl 10%, HPO 3 15%, V 2 o 5 0.8%, the balance is water;

[0047] 4) Paste SiO doped with 8% mass fraction on the back of the cleaned silicon wafer 2 the SiN mask, put the POCl 3 The mixed solution was placed in a diffusion furnace and heated at 400°C for 45 minutes;

[0048] 5) Cool, take out the silicon wafer after phosphorus diffusion, an