Pin bending forming mechanism

A technology of bending forming and pins, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of low efficiency, affecting the quality of semiconductors, and difficult processing, etc., and achieve the effect of improving bending efficiency

Active Publication Date: 2018-12-28
重庆市嘉凌新科技有限公司
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the process of semiconductor processing, it is necessary to bend the pins of semiconductors. Z-shaped is one of the common pin shapes. The existing bending process is mostly manual operation, which is difficult and inefficient.
Although there are some

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0019] The following is a further detailed description through specific implementations:

[0020] The reference signs in the drawings of the specification include: sliding seat 1, first spring 102, fixed rod 104, slideway 2, semiconductor 3, pin 30, horizontal forming plate 4, vertical forming plate 5, pressing plate 6, The second spring 67, the rail 7, the falling portion 71, the protrusion 72, the wedge rod 8, the wedge block 9, the hydraulic cylinder 10, the sleeve 11, the support rod 12, the first roller 13, the connecting rod 14, and the second roller 15 , Transverse rack 16, first gear 17, second gear 18, vertical rack 19.

[0021] Such as figure 1 As shown, the semiconductor 3 production equipment of this embodiment includes a rack. The rack is provided with a placement channel for placing semiconductors 3. The placement channel includes two sliding seats 1 that are both slidably connected to the rack laterally. A slideway 2 is vertically slidably connected to the upper parts

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of semiconductors, and particularly discloses a pin bending forming mechanism, comprising a machine frame, a placing channel for placing semiconductors isarranged on the machine frame, a pressing mechanism is arranged above the placing channel, a forming mechanism is arranged on one side of the placing channel, and a first transmission mechanism is connected between the pressing mechanism and the forming mechanism; the pressing mechanism comprises a rail fixed on the machine frame and a pressing plate vertically slidably connected with the machineframe, wherein the pressing plate is located between the placing channel and the rail, the rail is abutted with a slider, the rail comprises a falling part and a protruding part, and the slider can abut with the upper surface of the pressing plate; the forming mechanism comprises a transverse forming plate slidably connected to the frame and a vertical forming plate vertically slidably connected to the frame, wherein the transverse forming plate and the vertical forming plate are L-shaped. The adoption of the invention can ensure that the bending degree of the semiconductor pins is consistent.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner 重庆市嘉凌新科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products