Method for preparing high-hardness antireflection film on basis of hollow silicon dioxide

A silicon oxide, high hardness technology, applied in chemical instruments and methods, inorganic chemistry, silicon compounds, etc., can solve problems such as harsh environmental conditions, film damage, film peeling, etc., and achieve the effect of high light transmittance

Active Publication Date: 2019-03-22
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technology described by this patented solution allows for creating nanometer sized particles that are stable when stored without losing their effectiveness over time due to its use of specific chemical substances called silicon oxide (Si02). This results in an improved antireflective coating material made from these tiny structures.

Problems solved by technology

Technological Problem: The technical problem addressed in this patented text relates to improving the performance (efficiency) of antireflective materials applied onto surfaces like windows made from transparent plastic called sintered glass. Current solutions involve adding layers between two different components, which increases complexity and reduces optical transmission compared to traditional ways.

Method used

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  • Method for preparing high-hardness antireflection film on basis of hollow silicon dioxide
  • Method for preparing high-hardness antireflection film on basis of hollow silicon dioxide
  • Method for preparing high-hardness antireflection film on basis of hollow silicon dioxide

Examples

Experimental program
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Effect test

Embodiment 1

[0030] At room temperature, dissolve 0.12g of polyacrylic acid in 6ml of ammonia water, mix well and add to the rotor, slowly add a mixed solution of 84ml of 2-isopropoxyethanol and 36ml of methanol under stirring, and place it in a water bath at 30°C after the addition is complete After vigorously stirring for 10 minutes, 2ml tetraethyl orthosilicate was added dropwise in 5 times (0.4ml each time), the time interval was 10min, and the mixed solution was sealed and vigorously stirred for 10h to obtain a 60nm hollow SiO 2 Nanoparticle sol. Stir the above sol in a fume hood, and stop stirring when the pH of the solution drops to 7. After the weight percentage of the sol was adjusted to 1.5 wt%, it was recorded as the sol to be coated.

[0031] Put 2 × 10cm glass substrates (light transmittance 92%) in the sequence of 10% hydrochloric acid and 10% NaOH solution for ultrasonic treatment for 70min, the ultrasonic power is 60W, and then use Ultrasonic washing with water ethanol and d

Embodiment 2

[0033] At room temperature, dissolve 0.12g of polyacrylic acid in 6ml of ammonia water, mix well and add to the rotor, slowly add a mixed solution of 84ml of 2-isopropoxyethanol and 36ml of methanol under stirring, and place it in a water bath at 30°C after the addition is complete After stirring vigorously for 10 minutes, 0.2ml tetraethyl orthosilicate was added dropwise in 5 times with a time interval of 10 minutes. After the mixed solution was sealed and stirred vigorously for 10 hours, a hollow SiO with a thickness of 54.5nm was obtained. 2 Nanoparticle sol. Stir the above sol in a fume hood, and stop stirring when the pH of the solution drops to 7. After the weight percentage of the sol was adjusted to 1.5 wt%, it was recorded as the sol to be coated.

[0034] Put 2 × 10cm glass substrates (light transmittance 92%) in the sequence of 10% hydrochloric acid and 10% NaOH solution for ultrasonic treatment for 70min, the ultrasonic power is 60W, and then use Ultrasonic washing

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Abstract

The invention belongs to the field of optical thin film materials and particularly relates to a method for preparing a high-hardness antireflection film on the basis of hollow silicon dioxide. The method takes tetraethoxysilane as the raw material, polyacrylic acid as a templating agent, 2-isopropoxy ethyl alcohol and methyl alcohol as solvents together, and ammonium hydroxide as a catalyst to prepare a hollow SiO2 coating film sol through a template method, and a two-sided thin film is plated on a glass substrate through a dip-coating method. After being calcined at 550 DEG C, the antireflection film is obtained, the average light transmittance is more than 98% within the light transmittance wavelength range of 400-800 nm, and the hardness is more than 4H.

Description

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Claims

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Application Information

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Owner CHANGZHOU UNIV
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