Surface plasma-based device capable of improving luminous efficiency of LED

A surface plasmon and luminous efficiency technology, applied in the field of optical communication, can solve the problems of few reports, low SPP conversion efficiency, reduced light extraction efficiency, etc., to achieve the effect of improving luminous efficiency, internal quantum efficiency and light extraction rate

Pending Publication Date: 2021-11-16
GUANGXI NORMAL UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The Y.C.Chu research group used Ag films with a thickness of 0.3 and 0.6 nm to cover InGaN-GaN multiple quantum wells (MQWs) by electron beam evaporation, so that the Ag films became Ag nanoparticles. The experimental results showed that within a certain range, As the density of Ag nanoparticles increases, the internal quantum efficiency also increases, but the light output efficiency decreases; C.H.Lu's research group proposed a simple method to produce periodically distributed nanoparticles, which can enhance the internal quantum efficiency by 4.4 times. The disadvantage of the method is that the method is affected by factors such as metal nanoparticle size, particle distribution, particle shape, and particle

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface plasma-based device capable of improving luminous efficiency of LED

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0021] Embodiment:

[0022] Refer figure 1 A device based on surface plasma energy can improve the LED luminous efficiency, including the N-pole gate layer 1, multi-quantian trap, MQWS layer 3, PV (Indium Tinoxides) , Referred to as ITO) buffer layer 5, the P magnetic gate layer 4 and the indium tin oxide ITO impingement 5 are in a grating ridge inserted, with a mosaic configuration, increase the contact area, improve the luminous efficiency, on the indium tin oxide buffer layer 5 The surface is provided with a uniform set of strip-shaped metal AG6, wherein the N-pole gate layer 1 and the edge of the indium tin oxide ITO impurity 5 are respectively provided with N electrodes N-NAD2 and P electrodes P-NAD7, N electrode N, respectively. -nad2 and p electrodes P-NAD7 are in a diagonal position in the device physics center.

[0023] The N polarity gate layer, and the P magnetic gate layer is gallium nitride GaN.

[0024] The multi-quantum well, that is, the multi-quantum well layer havin

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a surface plasma-based device capable of improving the luminous efficiency of an LED, which is characterized by comprising an N-pole grating layer, a multi-quantum well (MQWS) layer, a P-pole grating layer and an indium tin oxide (ITO) buffer layer sequentially spliced from bottom to top. TheP-pole grating layer and the indium tin oxide ITO buffer layer are in grating ridge mosaic shape, a group of strip-shaped metal Ag is uniformly distributed on the upper surface of the indium tin oxide buffer layer, an N electrode N-nad and a P electrode P-nad are respectively arranged on the edges of the N-pole grating layer and the indium tin oxide ITO buffer layer, and the N electrode N-nad and the P electrode P-nad are diagonally arranged by taking the physical center of the device as the center. According to the device, the internal quantum efficiency and the light extraction rate of the LED can be improved.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner GUANGXI NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap