Semiconductor structure and forming method thereof

A semiconductor and graphics technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of increasing the difficulty and complexity of integrated circuits, and achieve the improvement of optical proximity effect, graphics accuracy guarantee, and increase the process window effect

Pending Publication Date: 2022-01-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for easier creation of three-dimensional structures without having any extra material needed during manufacturing processes. It achieves these technical benefits through reducing difficulties associated with making certain features such as gaps within cavities while maintaining high resolution imagery capabilities. Additionally, it improves the efficiency of etchant removal compared to traditional methods like wet chemical stripping. Overall, this technique helps streamline production time and reduces costs.

Problems solved by technology

The technical problem addressed during this patented research is improving the alignment accuracy for small-scale integration processes while reducing their time required due to increasing device sizes or complexities associated with these techniques.

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0012] It can be seen from the background art that how to improve the matching degree between the pattern formed on the wafer and the target pattern becomes a challenge. Specifically, in the current back-end process, the patterning process of metal interconnection lines is very difficult and the process window is small.

[0013] For example, when the pattern of the interconnection pattern is complex, the photolithography process requires a large number of masks, which not only leads to high process costs, but also complicates the pattern of the mask, and the optical proximity correction process of the mask is also difficult. It has high difficulty, which leads to poor graphic accuracy and graphic quality of the formed interconnection lines, and even causes the problem of short-circuit (Bridge) of the interconnection lines at positions that do not need to be connected.

[0014] One method utilizes dummy interconnection lines (Dummy lines) to increase the window of the photolithogr

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Abstract

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: forming first core layers on a target layer, wherein the opposite side walls of the adjacent first core layers in a second direction are respectively a first side wall and a second side wall respectively; forming a sacrificial layer covering the first side wall and spaced from the second side wall on the target layer; forming first side walls on the side walls of the first core layer and the sacrificial layer; forming a second core layer between the side wall of the sacrificial layer and the first side wall of the second side wall; forming a filling layer covering the second core layer and the side wall of the first side wall on the target layer; removing the sacrificial layer to form a groove; removing the first side wall located on the side wall of the groove, and forming a second side wall located on the side wall of the groove and a first groove defined by the second side wall; removing the second core layer to form a second groove; removing the first core layer to form a third groove; and patterning the target layer below the first groove, the second groove and the third groove to form a target pattern. The embodiment of the invention is beneficial to improving the pattern precision of the target pattern.

Description

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Claims

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Application Information

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Owner SEMICON MFG INT (SHANGHAI) CORP
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