System, Masks, and Methods for Photomasks Optimized with Approximate and Accurate Merit Functions

Active Publication Date: 2007-08-09
SYNOPSYS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0015] Aspects may provide for blocks to be processed using any of the methods described above. In some embodiments, blocks may be processed in parallel using multiple processors, blades or accelerator cards. Aspects may provide for the blocks to be combined after processing to provide a mask pattern for an entire layer of a semiconductor device or other workpiece. These aspects may provide for efficient full chip optimization.

Problems solved by technology

However, due to the wave nature of light, as dimensions approach sizes comparable to the wavelength of the light used in the photolithography process, the resulting wafer patterns deviate from the corresponding photomask patterns and are accompanied by unwanted distortions and artifacts.
However, it sometimes occurs that it is difficult or not possible to compute the gradient of a function.
Similarly, computing the value of a merit function may be very time-intensive.

Method used

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  • System, Masks, and Methods for Photomasks Optimized with Approximate and Accurate Merit Functions
  • System, Masks, and Methods for Photomasks Optimized with Approximate and Accurate Merit Functions
  • System, Masks, and Methods for Photomasks Optimized with Approximate and Accurate Merit Functions

Examples

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Example

[0052] As understood herein, the term “wafer pattern” is understood to include any polygon (rectilinear or non-rectilinear) or other shape or pattern to be formed on a semiconductor or other material substrate, for example digital or analog circuit structures or interconnect.

[0053]FIG. 1 is a diagram illustrating an example target pattern 100 to be printed on a wafer using a photolithography process. Target pattern 100 comprises regions 101 enclosed by contours 102. In an example embodiment, areas within regions 101 represent photoresist and the area outside regions 101 represents the absence of photoresist.

[0054]FIG. 2 is a diagram illustrating a more complex example target pattern 200 to be printed on a wafer using a photolithography process. The complexity of target pattern 200 is more illustrative of a pattern for representing an integrated circuit design.

[0055]FIG. 3 is a diagram illustrating a detail target pattern 300 from the example target pattern 200 of FIG. 2 to be printe

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Abstract

Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic, manufacturability of photomasks. An accurate, slower merit function may be used to determine adjustment parameters for a faster, approximate merit function. The faster merit function may be used for iteration and adjusted based on the adjustment parameters.

Description

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Claims

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Application Information

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Owner SYNOPSYS INC
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