Injector Laser

[0033]In the following the invention will be explained by concrete versions of its execution with references to the enclosed drawings. The presented examples of the Laser modification aren't unique and allow presence of other realizations including wavelengths within certain ranges the features of which are reflected in the multitude of attributes of the Claims.

[0034]The proposed Laser 1 (see FIG. 1-3) contains the laser heterostructure placed on the substrate 2 of the n-type GaAs. The said heterostructure is made on the basis of compounds InAlGaAs with the active InGaAs layer 3, with the waveguide layers 4, 5 and the confining layers 6, 7 of AlGaAs, placed correspondingly on the side of emission output and on the side opposite to it. The wavelength of laser emission was chosen equal to 0.98 μm. The functional bar of the Laser 1 is executed as a stripe and consists of alternating amplification regions 8 and output regions 9. The said alternation goes along the longitudinal optical axis