Plasma measuring method, plasma measuring device and storage medium
a plasma and measuring device technology, applied in the field of plasma measuring methods, can solve the problems of complex operation, multiple operation, and difficult positioning of plasma absorption probes, and achieve the effect of convenient optimization and high efficiency
Inactive Publication Date: 2010-12-23
TOKYO ELECTRON LTD
View PDF4 Cites 8 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
The technical effect that this patented technology allows operators to quickly optimize their settings during manufacturing processes by adjusting certain variables such as ion concentration or etchant velocity within specific ranges based on factors like material properties (such as crystal structure) and processing requirements. This makes it easier than previous methods because they only had one set of values at once.
Problems solved by technology
This technical problem addressed in this patents relates to improving the performance and efficiency of plasma treatment systems during production without requiring complex procedures involving adjustments made manually over time due to variations caused by factors including temperature differences within the system's environment. Additionally, there can also be difficulties accurately detecting when an ionic charge exceeds one specific value but does not require precise measurements on all values.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Login to view more
PUM
Login to view more
Abstract
Provided is a technique capable of ascertaining the process condition of the boundary between electrically positive and negative plasma regions. In a vacuum chamber, one of the parameters of process conditions is stepwisely changed to generate a plasma under at least three process conditions. The parameters include a flow rate ratio between an electrically negative gas and an electrically positive gas, a pressure in the vacuum chamber and the magnitude of an energy supplied to the gases. Next, a voltage is applied to a Langmuir probe positioned in that plasma, and a current-voltage curve indicating the relationship between the applied voltage and the electric current to flow through the probe is acquired for each of the process conditions. On the basis of the current-voltage curve group acquired, the process conditions are determined for the boundary between the electrically positive and negative plasma regions.
Description
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more
Owner TOKYO ELECTRON LTD
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap