3 results about "Atomic layer deposition" patented technology

The invention discloses a method of controllably preparing GaON films with different oxygen and nitrogen contents by means of an atomic layer deposition one-step method. The method comprises the following step: by means of a PEALD preparation technique, introducing reaction gas in proportion into a reaction chamber by taking a precursor trimethyl gallium as a gallium source and NH3 and O2 plasma as a nitrogen source and an oxygen source and regulating the flow ratio of NH3 and O2 gas to prepare the high quality GaOH films with certain oxygen and nitrogen contents on a substrate. The GaON filmprepared by the method has an atomic scale controllable thickness and uniformity of a large area. As the oxygen and nitrogen contents are controllable and the gap is adjusted, the prepared GaON film has good a photoelectric property and has important scientific value and a wide application prospect in the fields of sensors, photoelectric detection, micro-electronic apparatuses, photoelectric catalysis, energy sources and the like.

The invention provides a preparation method of a single-layer or double-layer WS2 film. According to the preparation method, plasmas such as WH2(iPrCp)2 and O2 are adopted as precursors, and a WO3 film is prepared through the atomic layer deposition (ALD) method; and then the WO3 film is subjected to vulcanization to obtain the single-layer or double-layerWS2 film. According to the preparation method of the single-layer or double-layer WS2 film, the ALD technology is adopted; the thickness of the film can be accurately controlled through the reaction period, and the single-layer or double-layer WS2 film with the good compactness can be generated. The single-layer or double-layer WS2 film prepared through the preparation method has the advantages of good repeatability, high control precision and the like.