The invention discloses a method for processing a semiconductor chip. The method comprises that: pollutants attached on the semiconductor chip are removed so that the cleaned semiconductor chip is acquired; and the mixed gas meeting the first preset condition is piped into a finishing stove in which the cleaned semiconductor chip is positioned so that a dangling bond at the interface of a gate electrode oxide layer and poly-silicon in the semiconductor chip is adjusted into a silicon hydrogen bond, wherein the mixed gas comprises nitrogen and hydrogen.