Material construction for enhancing optical property and temperature stability of self-organizing quantum point

一种自组织量子点、光学性质的技术，应用在激光器、声子激发器、激光器零部件等方向，能够解决光学性质温度稳定性的效果有限、温度稳定性下降等问题，达到光学性质温度稳定性好、发光质量好的效果

Inactive Publication Date: 2008-11-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of this structure is that the effect of improving the temperature stability of optical properties by increasing the barrier height is limited. Once the temperature exceeds the critical temperature at which carriers can transition to the barrier, the temperature stability will drop significantly.

Method used

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Embodiment Construction

[0023] Please refer to figure 1 , the present invention relates to a self-organized quantum dot material structure, including:

[0024] A substrate 6, the material of the substrate 6 is gallium arsenide;

[0025] A buffer layer 1, the buffer layer 1 is made on the substrate 6, the effect of the buffer layer 1 is to shield the defects from the substrate 6 and make the growth plane smooth, the thickness of the buffer layer 1 is 100 nanometers, the buffer layer 1 The material is gallium arsenide;

[0026] A quantum well layer 2, the quantum well layer 2 is made on the buffer layer 1, because the lattice constant of the quantum well layer 2 is greater than the barrier layer 3 above it, stress relaxation can occur when the barrier layer 3 grows, And this stress relaxation is introduced into the quantum dot layer 4, causing the quantum dot layer 4 to start to form points when the thickness of the indium arsenide wetting layer is small at this time. The tunneling between the size ...

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Abstract

Disclosed is a material structure which is capable of improving optical temperature stability of self-organized quantum dots. The material structure comprises a substrate; a cushioning layer is arranged on the substrate to conceal the defect of the substrate so as to make the growth surface plane; a quantum well layer is arranged on the cushioning layer to generate stress relaxation during the growth and guides the stress relaxation to the quantum dot layer above so as to reduce the thickness of the wetting layer; a barrier layer is arranged on the quantum dot layer and is capable of restricting the current carrier in the quantum dot layer to avoid the weakening of optical temperature stability of the quantum dot material caused by thermally excited transition; a quantum dot layer is arranged on the barrier layer and generates electron hole pairs and radiates composite light when being excited; a cover layer is arranged on the quantum dot layer and is used to change the optical property of the quantum dots and to increase the level spacing between the ground state and the excited state.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a material structure for improving the temperature stability of the optical properties of self-organized quantum dots. Background technique [0002] Self-organized quantum dots show attractive application prospects in optoelectronic devices, such as lasers, detectors, and optical storage. Theoretical prediction: Compared with semiconductor quantum well lasers, semiconductor lasers using quantum dots as active regions will have extremely low threshold current, high characteristic temperature, high differential gain and extremely narrow spectral linewidth. However, so far, the operating properties of semiconductor quantum dot lasers at room temperature are far from the level expected by theory. The temperature stability of quantum dot optical properties is crucial to realize the room temperature operation of quantum dot lasers. In order to make quantum dot material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01S5/343H01L33/02H01L33/14
Inventor 金灿金鹏王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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