Method for preparing silicon carbide nano line
A silicon carbide nanowire and carbonaceous technology is applied in the field of preparing silicon carbide nanowires, which can solve the problems of poor dispersion and crystallization, high price of carbon nanotubes, restricting practical application, etc., and achieves low environmental pollution, cheap raw materials, low cost effect
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[0015] Example 1: Lignite with a fixed carbon content of 92% and silica ore with a purity of 99% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or less with a ball mill, and then the raw powder is classified and sieved to obtain a particle size of below 50 mesh. Powder; SiO 2 Powder and carbon powder are mixed at a molar ratio of 1:1, and the mixed powder is placed in the graphite crucible of the vacuum induction furnace. After the system is closed, vacuum 10 -2 ~10 -4 Pa, the temperature is raised to 1200°C at a rate of 100°C / min, the reaction is stopped after 20 minutes of reaction, and then cooled to room temperature naturally to obtain the primary reaction product, which is burned at 800°C for 1 hour, and the excess in the product is removed with hydrofluoric acid The silicon dioxide is washed, filtered, and dried to prepare SiC nanowires with a diameter of 90-110nm and a length of micrometers.
Example Embodiment
[0016] Example 2: Bamboo charcoal with a purity of 99% and silica ore with a purity of 99% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or more with a ball mill. After crushing, they are ground into a powder with a size of 20 mesh or less with a ball mill. The raw material powder is classified and sieved to obtain a powder with a particle size of 100 mesh. SiO 2 Powder and carbon powder are mixed at a molar ratio of 2:1, and the mixed powder is placed in the corundum crucible of the vacuum induction furnace. After the system is closed, vacuum 10 -2 ~10 -4 Pa, the temperature is raised to 1400°C at a rate of 100°C / min, the reaction is stopped after 30 minutes of reaction, and then naturally cooled to room temperature to obtain the primary reaction product, which is burned at 700°C for 3h, and the excess in the product is removed with hydrofluoric acid The silicon dioxide is washed, filtered, and dried to prepare the SiC nano
Example Embodiment
[0017] Example 3: Activated carbon with a purity of 98% or more and waste quartz with a purity of 99.9% or more are used as raw materials. After crushing, they are ground into a powder with a size of 20 mesh or less by a ball mill, and then the raw powder is classified and sieved to obtain a powder with a particle size of 150 mesh. SiO 2 The powder and activated carbon powder are mixed at a molar ratio of 3:1. The mixed powder is placed in the graphite crucible of the vacuum induction furnace. After the system is closed, the system is vacuumed to remove the air in the system, and the temperature is raised to 1600°C at a rate of 100°C / min. After 40 minutes, stop the reaction, and then cool to room temperature to obtain the primary reaction product, burn it at 900°C for 1 hour, remove excess silica in the product with hydrofluoric acid, and then wash, filter, and dry to prepare SiC nanowires The diameter is 40-120nm, and the length is in the micron range.
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