Operation method of magnetic random access memory device
A random access memory and magnetoresistive technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of tunnel barrier layer damage, inability to guarantee current, asymmetry, etc.
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[0023] Exemplary embodiments of the present invention will be more clearly understood from the detailed description taken in conjunction with the accompanying drawings.
[0024] Various example embodiments of the invention will now be described more fully with reference to the accompanying drawings, in which some example embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.
[0025] Specific exemplary embodiments of the present invention are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments of the present invention. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the embodiments set forth herein.
[0026] Therefore, although the example embodiments are capable of various modifications and alternative forms, the examples of the exampl
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