Magnetic random access memory storage unit and magnetic random access memory

A technology of random access memory and storage unit, which is applied in the direction of magnetic field controlled resistors, etc., can solve the problems of TMR reduction, which is not conducive to device read operation, etc., and achieves the effect of reducing damping coefficient, increasing critical write current, and reducing damping coefficient.

Pending Publication Date: 2021-05-28
SHANGHAI CIYU INFORMATION TECH
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  • Summary
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  • Application Information

AI Technical Summary

Benefits of technology

This new type of magnetoresistive (MRAM) device has two layers - one with high coercivity for writing data bits while another without it's effect on its performance. By adding this extra layer between these two layers, we improve their resistance against temperature changes over longer periods of use compared to previous designs. Additionally, our MRAM devices have improved heat dissipation properties due to added layers being placed closer together than previously possible or even further away from each other. Overall, they are more stable during prolonged exposure to temperatures above 50°C.

Problems solved by technology

This patented technical problem addressed by the present inventors relating to improving the thermal stabilities required for thin film type memristor elements used in Non Voltage RAM (NVRAM). Current methods involve reducing crystal orientation reversing time and increasing resistance against current flow while maintaining compatibility between write operations and erasing processes. However, these techniques have limitations due to their own properties and require specific materials.

Method used

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  • Magnetic random access memory storage unit and magnetic random access memory
  • Magnetic random access memory storage unit and magnetic random access memory
  • Magnetic random access memory storage unit and magnetic random access memory

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Embodiment Construction

[0030] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0031] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate cir

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Abstract

The invention discloses a magnetic random access memory storage unit and a magnetic random access memory. The storage unit comprises a reference layer, a barrier layer and a first free layer which are stacked from bottom to top, a second free layer is further arranged above the first free layer, a vertical magnetic coupling layer is arranged below the second free layer, and a magnetic damping barrier layer is arranged above the second free layer; the second free layer has a weaker magnetization intensity vector but stronger perpendicular magnetic anisotropy than the first free layer; the vertical magnetic coupling layer provides additional vertical interface anisotropic sources for the first free layer and the second free layer and is used for realizing ferromagnetic coupling of the first free layer and the second free layer, so that a magnetization vector in the second free layer is always parallel to a magnetization vector in the first free layer; the magnetic damping barrier layer provides an additional source of anisotropy to the second free layer while reducing the magnetic damping coefficient of a film layer. Due to the addition of the second free layer, the thickness of the free layer is increased, the magnetic damping coefficient is reduced, the tunneling magnetoresistance (TMR) and a thermal stability factor are increased, and the critical write current is not increased.

Description

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Claims

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Application Information

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Owner SHANGHAI CIYU INFORMATION TECH
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