Method of forming a backside electrode for use in a thin film solar cell

A technology of solar cells and back electrodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of waste of metal ingots, high operating costs, and cycle (long ineffective time), and achieve high-efficiency manufacturing and low-cost effects.

Inactive Publication Date: 2010-12-29
KOMURA TECH
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in forming the rear electrode layer by the above-mentioned sputtering method, a part other than the necessary part is also formed into a film, so part of the expensive metal ingot is also wasted.
In addition, since the sputtering method is a batch process, the cycle (dead time) is long, and there is a problem that it is difficult to increase the size of the substrate to be processed due to the limitation of the chamber size of the sputtering device used.
[0008] In addition, there are many vacuum devices and incidental equipment in the sputtering device. Therefore, a large space is required for the installation of the device, and there are many resources that must be continuously supplied for continuous processing such as inert gas and electric power used to collide with the target. Running costs are also higher
In addition, these problems are problems common to conventional methods of forming the rear electrode layer such as vapor deposition and CVD.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of forming a backside electrode for use in a thin film solar cell
  • Method of forming a backside electrode for use in a thin film solar cell
  • Method of forming a backside electrode for use in a thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0077] Example 1

[0078] Under the above processing conditions, use a flexographic printing machine to print and transfer the nano silver conductive ink to the back of the substrate 1 on which the transparent electrode layer 2 and the photoelectric conversion layer 3 are pre-formed on the glass substrate. The temperature is 80°C for 5 minutes. After pre-baking it under the conditions, it is sintered (the temperature is increased from 70°C to 300°C within 30 minutes) to obtain a back electrode for thin-film solar cells with a film thickness of 0.4 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
The average particle sizeaaaaaaaaaa
Viscosityaaaaaaaaaa
Film thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method of forming a backside electrode for use in a thin film solar cell, which does not waste expensive metal and resource, and is capable of forming uniform backside electrode layer with high efficiency and low cost on a substrate of arbitrary size and shape. The method comprises: holding conductive ink containing metal particle on a flexible printing plate (11) the surface of which is provided with an ink holding part of specified pattern, transfer-printing the conductive ink held in the ink holding part to an insulation transparent substrate (1) on which a photoelectric conversion layer (3) is formed on the backside of a transparent electrode layer (2) through lamination, and then heating the transfer-printing conductive ink, thereby, regardless of arbitrary size and shape of a substrates, a backside electrode layer (4) of specified pattern can be formed quickly and efficiently on the backside of the substrate.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner KOMURA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products