Method for manufacturing stable high temperature-resistant hydrogen end group conducting channel on diamond surface

[0025] Example 1: (1) A high-resistance diamond of 300 μm was grown on a molybdenum substrate by microwave plasma chemical vapor deposition;

[0026] (2) Form a p-type conductive channel on the high-resistance diamond material by hydrogen plasma treatment for 30 minutes;

[0027] (3) The hydrogen-terminated diamond obtained after treatment is placed in a chemical vapor deposition equipment and vacuumed to 10 -4 mbar, then into NH 3 and H 2 The mixture of which NH 3 The flow rate is 500mL / min, H 2 The flow rate is 20L / min, the reaction chamber pressure is 100mbar, and the treatment time is 1 hour.

[0028] (4) After taking out the sample, deposit 3nm HfO in the atomic layer deposition equipment at room temperature 2 The dielectric barrier layer prevents the surface of the hydrogen-terminated diamond adsorbed with polar molecules and functional groups from being directly exposed to the environment.

[0029] Example 2: (1) A high-resistance diamond of 300 μm was grown on a molybdenum substrate by a direct current arc method;

[0030] (2) Form a p-type conductive channel on the high-resistance diamond material by hydrogen plasma treatment for 30 minutes;

[0031] (3) Soak the hydrogen-terminated diamond obtained after treatment in trimellitic anhydride TMA for 30 min;

[0032] (4) After taking out the sample, deposit 3nm Al in the atomic layer deposition equipment at room temperature 2 o 3 The dielectric barrier layer prevents the surface of the hydrogen-terminated diamond adsorbed with polar molecules and functional groups from being directly exposed to the environment.

[0033] When this hydrogen-terminated diamond is exposed to an atmosphere of polar molecules, it will adsorb the polar molecules and form an electrochemical system. In this system, the electronegativity of the C-H dipole is 1.3eV, and the valence band is higher than The chemical potential of adsorbed polar