Plasma processing chamber and base manufacturing method therefor

A manufacturing method, plasma technology, applied in the manufacture of ships or leading wires, etc., to achieve the effect of preventing arc discharge and metal pollution

Active Publication Date: 2015-09-23
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology allows for precise control during production without causing damage or contamination from previous processes. It achieves this through creating an enclosed space where two types of materials are placed together under pressure while being heated up simultaneously.

Problems solved by technology

This patented technical problem addressed by this patents relates to how to safely handle these devices during production without causing damage from heat generated when they operate at very specific temperatures while also ensuring proper performance over time due to factors like thermal expansion issues caused by changes made during use.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma processing chamber and base manufacturing method therefor
  • Plasma processing chamber and base manufacturing method therefor
  • Plasma processing chamber and base manufacturing method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0023] It should be pointed out that the words "semiconductor process piece", "wafer" and "substrate" will often be used interchangeably in the following description, and in the present invention, they all refer to the process processed in the processing chamber. The process parts are not limited to wafers, substrates, substrates, large-area flat substrates, etc. For the convenience of description, the "substrate" will be used as an example in the description and illustrations of the embodiments herein.

[0024] figure 1 A schematic structural view of a plasma processing chamber is shown. The plasma processing chamber 100 has a processing chamber (not shown), the processing chamber is substantially cylindrical, and the side wall 102 of the processing chamber is substantially vertical, and there are upper electrodes and lower electrodes arranged paral

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a plasma processing chamber and a base manufacturing method therefor, and the chamber comprises a cavity. A base is disposed below the cavity and used for carrying a substrate. Reaction gas enters into the cavity from the top of the cavity, and is activated into plasma under the action of radio frequency heat, thereby achieving the processing of the substrate on the base. The method comprises the following steps: providing a base body and setting a cooling liquid channel on the base body; employing hot pressing to enable a first insulating layer to be pasted at the upper part of the base body, wherein the interior of the first insulating layer is provided with a heating apparatus; and employing hot spraying to make anticorrosion coating layer at the periphery of the base body. The chamber and method can prevent arc pollution and metal pollution, and cannot cause the melting of a material layer because of the pressure and temperature difference in a manufacturing process.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap