LED chip and manufacturing method therefor

[0032] An embodiment of the present invention provides an LED chip, see figure 1 with figure 2 , the LED includes a substrate 1, and an n-type nitride semiconductor layer 2, a light-emitting layer 3, a p-type nitride semiconductor layer 4, a current blocking layer 5, a transparent conductive layer 6, and a p-type nitrogen semiconductor layer stacked on the substrate 1 in sequence. The compound semiconductor layer 4 is provided with a groove extending to the n-type nitride semiconductor layer 2, and the n-type nitride semiconductor layer 2, the sidewall of the groove, and the transparent conductive layer 6 are provided with a passivation layer 7, and the transparent conductive layer 6 The passivation layer 7 on the top is provided with a first through hole extending to the p-type nitride semiconductor layer 4, the p-type electrode 8 is arranged in the first through hole, and the passivation layer 7 on the n-type nitride semiconductor layer 2 There is a second through hole extend

[0041] The embodiment of the present invention provides a method for manufacturing an LED chip, see image 3 , the production method includes:

[0042] Step 201: Epitaxially grow an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer on a substrate in sequence.

[0043] Specifically, the substrate can be a sapphire substrate, or a nitride semiconductor, such as SiN, GaN; the n-type nitride semiconductor layer can be an n-type doped GaN layer; the light-emitting layer can include alternately stacked InGaN quantum well layers and The GaN quantum barrier layer; the p-type nitride semiconductor layer may be a p-type doped GaN layer.

[0044] Step 202: Opening a groove extending to the n-type nitride semiconductor layer on the p-type nitride semiconductor layer.

[0045] Step 203 : forming a current blocking layer on the p-type nitride semiconductor layer, in which there are via holes extending to the p-type gallium nitride semiconduc

[0058] The embodiment of the present invention provides a method for manufacturing an LED chip, which is a specific implementation of the method provided in Embodiment 2. The method includes:

[0059] Step 301: Epitaxially grow an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer on the substrate by metal-organic chemical vapor deposition to form an epitaxial wafer.

[0060] Step 302: cleaning the epitaxial wafer, and opening a groove extending to the n-type nitride semiconductor layer on the p-type nitride semiconductor layer by using photolithography technology and dry etching technology.

[0061] Step 303: Deposit a silicon dioxide film on the epitaxial wafer by chemical vapor deposition technology, and wet-etch under the protection of the positive photoresist to form a current blocking layer covered with the third through hole, and remove the positive photoresist, the first step The cross-section of the three-way hole is a ci