Quantum dot light-emitting diode and preparation method thereof

[0033] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0034] S01: Provide the bottom electrode;

[0035] S02: preparing a nanopillar array on the surface of the bottom electrode;

[0036] In the nanocolumn array, the diameter of the nanocolumn is λ / (4×n 1 ), and the distance between any two adjacent nanopillars is λ / (4×n 2 ); Wherein, λ is the output light central wavelength of the quantum dot light-emitting diode, n 1 is the refractive index of the nanopillar material, n 2 is the refractive index of the filling material between the nanopillars, and n 1 ≠n 2 .

[0037] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention is a device preparation method with high repeatability, low cost and high light extraction efficiency. In this preparation method, nano Column array,...

[0052] A QLED device with high light extraction efficiency, its structure is as follows figure 1 As shown, it includes anode, hole injection layer, hole transport layer, quantum dot light emitting layer, electron transport layer and cathode from bottom to top. A nanocolumn array composed of several nanocolumns is arranged on the surface of the anode close to the hole injection layer, and the material of the hole injection layer is filled in the gap between the nanocolumns; in the nanocolumn array, the diameter of the nanocolumn is λ / (4×n 1 ), and the distance between any two adjacent nanopillars is λ / (4×n 2 ); Wherein, λ is the output light central wavelength of the quantum dot light-emitting diode, n 1 is the refractive index of the nanocolumn, n 2 is the refractive index of the hole injection layer material, and n 1 ≠n 2 .

[0053] The preparation method of the device comprises the following steps:

[0054] S11: Prepare an ITO electrode (ie, an anode) on a transparen...