Method for detecting content of metal ions in oxidation film on surface of silicon wafer

A metal ion and silicon wafer surface technology, applied in the direction of material excitation analysis, thermal excitation analysis, etc., can solve problems such as inaccurate numerical values, achieve accurate methods, reduce the influence of human factors, and improve accuracy

Inactive Publication Date: 2017-11-24
TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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Problems solved by technology

The polished silicon wafer includes a silicon substrate and a silicon dioxide film layer covering the silicon substrate. In the prior art, only the metal content on the surface of the silicon wafer is generally detected as the metal content of the silicon dioxide film layer. In fact, this part It also includes the metal content on the surface of the silicon substrate, which leads to inaccurate values ​​actually detected

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  • Method for detecting content of metal ions in oxidation film on surface of silicon wafer
  • Method for detecting content of metal ions in oxidation film on surface of silicon wafer
  • Method for detecting content of metal ions in oxidation film on surface of silicon wafer

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[0015] It should be noted that the embodiments in the invention and the features in the embodiments can be combined with each other if there is no conflict.

[0016] In the description of the invention, it should be understood that the terms "center", "vertical", "horizontal", "upper", "lower", "front", "rear", "left", "right", The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying. The device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore,

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Abstract

The invention provides a method for detecting the content of metal ions in an oxidation film on the surface of a silicon wafer. The method is characterized in that two same sample wafers are selected; oxidation treatment is carried out on the surface of one sample wafer, so that the sample wafer having the surface coated with an oxidation film can be obtained; the contents of metal ions on the surfaces of the two sample wafers are detected, and the content of the metal ions in the oxidation film can be obtained based on data difference of the two sample wafers. The method provided by the invention is accurate and effective, realizes all-element and ultramicro precision measurement of the metal ions in the oxidation film indeed, provides scientific test data for a process technology for reducing the introduction of metallic element impurities in a whole production process, meets the requirements of manufacturers during semiconductor manufacturing, and plays an active role in improving the ex factory pass rate of products and lowering the cost of semiconductor component manufacturers.

Description

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Claims

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Application Information

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Owner TIANJIN ZHONGHUAN ADVANCED MATERIAL TECH
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