Method for prolonging minority carrier lifetime of silicon carbide epitaxial material
A minority carrier and epitaxial material technology, which is applied in the field of improving the minority carrier life of silicon carbide epitaxial materials, can solve the problems of complex process and material pollution, and achieve simple process, reduce etching effect, and eliminate carbon vacancies Effect
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[0028] Example 1
[0029] Hundreds of carrier lifetime of 50 μm thick SiC epitaxial material prepared on the n-type SiC substrate (ethylene, trichloride and nitrogen gas, silicon source, and doped sources, respectively), such as figure 1 As shown, including the following steps:
[0030] Step, the cleaned N-type SiC substrate is placed in the reaction chamber of the SiC chemical vapor deposition device, and the reaction chamber is vacuum-processed, and the vacuum is pumped to 2 × 10 -3 MBAR;
[0031] Step 2, high-purity hydrogen is all incorporated into the reaction chamber, and the reaction chamber pressure is adjusted to 80 mbar, and the temperature is slowly increased to 1650 ° C, ethylene, trichloride and nitrogen flow, respectively, respectively, respectively, to 18 Sccm, 75 Sccm, and 250 SCCM and set to the zone After the temperature is stable, it is maintained for 5 minutes, and the SiC substrate is surface treatment;
[0032] Step three, maintain the temperature and pressure o
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[0038] Example 2
[0039] Improve a small amount of carrier life of 50 μm thick SiC epitaxial material prepared on the n-type SiC substrate, using hydrogen chloride assist treatment substrate surface (ethylene, trichloride and nitrogen gas, silicon source, and doped source, respectively .
[0040] Step 1, placing the cleaned SiC substrate into the reaction chamber of the SiC chemical vapor deposition device, and pumping vacuum treatment on the reaction chamber, pumping the vacuum to 2 × 10 -3 MBAR;
[0041] Step 2, the high-purity hydrogen is all incorporated into the reaction chamber, and the reaction chamber pressure is adjusted to 80 mbar, and the flow rate is slow to 1650 ° C, ethylene, trichloride, nitrogen and hydrogen chloride, respectively, respectively, to 18 Sccm, 75 Sccm, 250 Sccm and 10SCCM is set to be exclusive, and the hydrogen chloride is transferred into the reaction chamber for 3 min after stabilization, and the SiC substrate is surface treatment;
[0042] Step thre
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