Optimization method of laser plasma extreme ultraviolet light source target material

The invention relates to a laser plasma extreme ultraviolet light source target optimization method, which comprises the following steps of: growing a tin film on a target substrate for generating laser plasma in an electron beam evaporation manner to form a solid film target with limited mass, and controlling the tin amount consumed by single action of laser by controlling the thickness of a tin layer; when the high-energy pulse laser acts with the target material to generate plasma, the generation efficiency of extreme ultraviolet light and the generation of chips are optimized by controlling the tin amount of the thin film target. The amount of tin fuel growing on the surface of the target material is adjusted by controlling the thickness of the thin film, so that tin can be fully utilized under the action of single laser pulse and light spots, the laser conversion efficiency and the utilization rate of working substances of the target material can be effectively improved, and pollution of scraps to an optical system is reduced.