Free operation single photon detector and readout circuit
A single-photon detector and single-photon detection technology, applied in the field of photoelectric detection, can solve the problems of low count rate, low integration and high noise of single-photon detector arrays, achieve flexible array scale and arrangement, and improve integration. , the effect of high saturation count rate
Active Publication Date: 2022-05-27
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
This patented technology allows for fast control over how many photons enter each channel on a chip without affecting its ability to perform calculations or other functions effectively. It achieves this by incorporating avalanches (a type of light) into certain parts of the device called the gate electrode layer. By controlling these components, it becomes possible to quickly stop any attacks from happening at specific points within the chip. Additionally, there is also included a mechanism where the current flow when no attack occurs stops before another hit point takes place. Overall, this technology enables efficient operation and improved data processing capabilities while reducing errors caused during testing.
Problems solved by technology
This patented describes various techniques related to making electronic devices that have better ability to sense signals without being affected or blindly detected over longer periods of time compared to traditional methods like crystal oscillators. These include advanced technologies like multi-mode optical coherencet detection, multiple-shot pyrogen reduction, and atomic layer deposition technique. However, these improvements require precise timing and efficient operation within one millisecond range. Current solutions involve complex structures requiring expensive components, slow response times, and poor overall image quality.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0030] like figure 1 As shown, a free-running single-photon detector array and readout circuit includes a negative feedback avalanche photodiode (NFAD), a low-noise DC bias circuit, an avalanche readout discriminating circuit, a bias voltage amplifier circuit, a dead-time timer circuit, and a Temperature control circuit; NFAD adopts 62.5 / 125μm multimode fiber self-quenching single-photon detector developed by Princeton Optoelectronics, and integrates three-stage thermoelectric cooler and thermistor; avalanche readout discriminating circuit includes low noise amplifier, high-speed comparator, D flip-flop and level conversion chip; bias amplifier circuit includes DC regulated power supply and field effect transistor;
[0031] like figure 2 As shown in the figure, 8 NFAD pigtails are arranged in a line through the optical fiber close-packed technology, and the optical signals received on the array are coupled to the NFAD through the pigtails; the low-noise DC bias circuit uses a
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
Login to view more Abstract
The invention provides a free-operation single-photon detector and a readout circuit. The free-operation single-photon detector comprises a single-photon detection array, at least two avalanche readout discrimination circuits, a low-noise direct-current bias circuit, a dead time timing circuit and at least two bias voltage amplification circuits, the single photon detection array comprises at least two negative feedback avalanche photodiodes, and tail fibers of the multiple negative feedback avalanche photodiodes are densely arranged to form a tail fiber array; the avalanche readout discrimination circuit is connected with the cathode of the negative feedback avalanche photodiode through a capacitor, the output end of the avalanche readout discrimination circuit is connected with the bias amplification circuit, and the output end of the bias amplification circuit is connected with the anode of the negative feedback avalanche photodiode; the dead time timing circuit is connected with the output end of the avalanche reading and discriminating circuit; and the low-noise direct-current biasing circuit is connected with the cathode of each negative feedback avalanche photodiode through a high-resistance resistor. The technical problems that a single-photon detector array is low in counting rate, high in noise and low in integration degree are solved.
Description
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap