Free layer of magnetic tunnel junction, magnetic tunnel junction and spin transfer torque magnetic random access memory

A magnetic tunnel junction and free technology, applied in the direction of magnetic field controlled resistors, electromagnetic equipment components, material selection, etc., can solve the problems of increasing chip energy consumption, large critical writing current, shortening chip life, etc., to achieve Improve the erasing and writing resistance performance, improve STT efficiency, and reduce the effect of writing current

Pending Publication Date: 2022-06-28
ZHEJIANG HIKSTOR TECHOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This new technology allows for more efficient use of space on an integrated circuit chip (IC). Unlike previous designs where only one bit per cell was possible due to limitations such as leakage currents or voltage fluctuations during operation. Instead, this design uses multiple bits instead of just one single bit. Additionally, it achieves better performance without increasing power consumption compared to existing devices because there's no longer any extra layers needed between them. Overall, these technical improvements make electronic components faster and cheaper to produce while still being able to store large amounts of digital data accurately over long periods of times.

Problems solved by technology

This patented technical problem addressed by the patented technology relates to reducing writing current requirements during programming operations in MRAM due to increased energy usage compared to traditional methods such as transistor random access memories (TCAM), which require larger readings from smaller sizes.

Method used

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  • Free layer of magnetic tunnel junction, magnetic tunnel junction and spin transfer torque magnetic random access memory
  • Free layer of magnetic tunnel junction, magnetic tunnel junction and spin transfer torque magnetic random access memory
  • Free layer of magnetic tunnel junction, magnetic tunnel junction and spin transfer torque magnetic random access memory

Examples

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Embodiment 1

[0032] The free layer provided by this embodiment includes a first ferromagnetic layer, a spacer layer, a second ferromagnetic layer and a capping layer which are deposited in sequence. Wherein, the material of the first ferromagnetic layer is Co-Fe-B alloy (Co accounts for 30wt%, Fe accounts for 50wt%), the thickness is 0.9nm, and the material of the second ferromagnetic layer is Co-Fe alloy (Co accounted for 30wt%), and the thickness was 0.7nm; the spacer layer was composed of W and Mg (W accounted for 40wt%), and the thickness was 0.3nm; the material of the cover layer was Ru, and the thickness was 3nm.

Embodiment 2

[0034] The free layer provided by this embodiment includes a first ferromagnetic layer, a spacer layer, a second ferromagnetic layer and a capping layer which are deposited in sequence. The material of the first ferromagnetic layer is Co-Fe-B alloy (Co accounts for 30wt%, Fe accounts for 50wt%), and the thickness is 0.8nm; the material of the second ferromagnetic layer is Ni-Fe alloy ( Ni accounts for 40 wt %), and the thickness is 0.6 nm; the spacer layer is composed of Ta and Al (Ta accounts for 30 wt %), and the thickness is 0.6 nm; the material of the cover layer is MgO, and the thickness is 2.5 nm.

Embodiment 3

[0036] The free layer provided by this embodiment includes a first ferromagnetic layer, a spacer layer, a second ferromagnetic layer and a capping layer which are deposited in sequence. The material of the first ferromagnetic layer is Co-Fe-Ni alloy (Co accounts for 20wt%, Fe accounts for 60wt%), and the thickness is 0.6nm; the material of the second ferromagnetic layer is Ni-Fe alloy ( Ni accounts for 40 wt%), and the thickness is 0.5 nm; the spacer layer is composed of W and Si (W accounts for 30 wt%), and the thickness is 0.3 nm; the material of the cover layer is MgO, and the thickness is 1.5 nm.

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Abstract

The invention belongs to the technical field of magnetic tunnel junctions, and particularly relates to a free layer of a magnetic tunnel junction, the magnetic tunnel junction and a spin transfer torque magnetic random access memory. The free layer provided by the invention comprises a first ferromagnetic layer, a spacing layer and a second ferromagnetic layer which are in contact in sequence; the thickness of the first ferromagnetic layer and the thickness of the second ferromagnetic layer are both smaller than or equal to 1 nm, and the thickness of the second ferromagnetic layer is smaller than that of the first ferromagnetic layer. The spacer layer comprises at least two non-magnetic elements. According to the invention, the thickness of the first ferromagnetic layer and the second ferromagnetic layer in the free layer structure is controlled to be less than 1nm, so that the STT efficiency is effectively improved, and the write-in current is reduced; meanwhile, the spacer layer in the free layer structure is composed of at least two different non-magnetic elements, and the two elements have high binding energy, so that the stability of the spacer layer structure is ensured, element diffusion caused by thickness reduction of the magnetic layer is inhibited, and the erasing resistance is improved.

Description

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Claims

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Application Information

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Owner ZHEJIANG HIKSTOR TECHOGY CO LTD
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