MRAM sense amplifier for offsetting deviation

The invention discloses an MRAM (Magnetic Random Access Memory) sense amplifier capable of offsetting deviation. The MRAM read-out circuit is used as a post-amplifier of the MRAM read-out circuit, andcomprises NMOS tubes M0 and M1 with the same parameters, NMOS tubes M2 and M3 with the same parameters, PMOS tubes M4 and M5 with the same parameters, capacitors C0 and C1, and three same switches K1and K2; the drain electrode of the M2 is connected with the drain electrode of the M4, wherein the connection point is a point A; the grid of M2 is connected with the grid of M4, wherein the connection point is a point B; the drain of M3 is connected with the drain of M5, wherein the connection point is a point C; the grid of M3 is connected with the grid of M5, wherein the connection point is apoint D; the capacitor C0 is connected between the point B and the point C, and the capacitor C1 is connected between the point A and the point D. In the working stage, the capacitor C0 and the capacitor C1 counteract asymmetry of the read-out differential amplifier. A pair of capacitors is added on the basis of a common differential comparator, asymmetry of the differential amplifier can be counteracted, and meanwhile the area of the amplifier does not need to be large.