Semiconductor memory device and method of production

[0044] The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0045] Preferred examples of the semiconductor memory device are described in conjunction with the figures with reference to the production steps of a preferred production method. The conductor tracks are provided as word lines in this example.

[0046]FIG. 1 shows a cross-section of a first intermediate product. A first word line layer 2 and a hard mask 3 are applied on a main surface of a semiconductor body 1, such as a substrate. The first word line layer 2 can be a layer sequence, typically formed of a first layer of doped polysilicon, followed by a second layer of metal or