Electrolyte pattern and method for manufacturing an electrolyte pattern

EXAMPLE

[0147]The following is a preferred embodiment of the manufacturing method and the resulting transistor according to the present invention. In a first step, source, drain, and gate electrodes are patterned from an evaporated gold layer on a glass substrate. The source and drain electrodes are separated so as to define a transistor channel between them. The channel length L is 20 μm, and the width W is 1 mm. The gate electrode is positioned laterally to the source-drain electrode pair, at a distance of 1 mm.

[0148]A thin layer (40 nm thick) of the semiconducting polymer ADS2008 (supplied by American Dye Source Inc., Canada) is then spin-coated onto the substrate from a 1% toluene solution and annealed in air. Annealing is performed at a temperature of 80 deg. C. for 10 minutes.

[0149]A layer (600 nm thick) of the gelling agent poly(methylmethacrylate) (PMMA) is spin-coated onto the semiconductor layer from a 6% butylacetate solution and annealed in air. Again, annealing is performed