Isolation methods for leakage, loss and non-linearity mitigation in radio-frequency integrated circuits on high-resistivity silicon-on-insulator substrates

[0032]Hereinafter, embodiments of structures for implementing radio-frequency integrated circuits (RFICs) on high-resistivity silicon-on-insulator (SOI) substrates thereof, and methods of limiting a PSC layer in a RFIC, are described with reference to the accompanying drawings. Like reference numerals may refer to similar or identical elements throughout the description of the figures. It is understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Many of the processes are known to one of skill in the art and are described in general detail only.

[0033]As it is used herein, the term ohms-cm (“ohms centimeter”) generally refers to the measurement of the volume resistivity (also known as bulk resistivity) of a semiconductor material. As used herein, “SOI transistors” generally refers to transistors