Method for reworking a multi-layer photoresist following an underlayer development

The following is a detailed description of the present invention made in conjunction with the attached Figures, wherein like reference numerals will refer to like elements throughout. The present invention is directed to a method of re-working a multi-layer photoresist. After patterning the photoresist, a portion of an underlying process layer is exposed therethrough and the resist is inspected for defects. Upon an affirmative identification of a defect, the patterned multi-layer photoresist (which comprises an underlying layer covered by an imaging layer) is covered with a protection layer, which also covers the exposed portion of the process layer. The protection layer and imaging layer are then removed in a generally concurrent fashion, after which a portion of the protection layer still resides over the exposed process layer. The underlying layer and remaining protection layer are then removed in a generally concurrent fashion. The re-work methodology of the present invention advan