2 results about "Active structure" patented technology

A silicon on insulator shaped structure formed to reduce floating body effect comprises a T-shaped active structure and a body contact for back bias. Etching a T-shape through two layers of oxide will form the T-shaped active areas. A back bias is formed when a metal line is dropped through the SOI structure and reaches a contact plug. This contact plug is doped with N+ or P+ dopant and is embedded in a Si substrate. The T-active shaped structure is used to reduce the short channel effects and junction capacitance that normally hinder the effectiveness of bulk transistors. The back bias is used as a conduit for generated holes to leave the SOI transistor area thus greatly reducing the floating effects generally associated with SOI structures.

A manufacture method for a trumpet-shaped contact includes the following steps of: forming a first insulating layer on a silicon underlay which is formed with an active structure, an isolation and a metal silicide; then forming a second insulating layer; forming a photosensitive resist and forming a contact hole pattern of the photosensitive resist by photoetching and developing; etching the second insulating layer and the first insulating layer to form a contact hole; returning the photosensitive resist; carrying out the etching adopting a gas with high selectivity ratio of the second insulating layer/the first insulating layer on the second insulating layer and the first insulating layer to form a trumpet-shaped contact hole; removing the photosensitive resist; filling and contacting metals as well as flatting; forming a dielectric medium layer between metals and etching a metal wire pattern; filling a first metal and flatting; continuing other manufacture processes. The trumpet-shaped contact manufactured by the method can prevent the dispersing of copper.