3 results about "Free space" patented technology

A capacitive pressure sensor made up of two silicon on insulator (SOI) wafers lying opposite of each other and joined to each other in a vacuum-tight manner, a recess being formed between the two wafers. The first wafer exclusively supports the evaluation circuits required for measuring the applied pressure and a capacitive electrode, and the second wafer has a recess formed by surface micromechanics processes, in which the counter electrode to the capacitive electrode of the first wafer is situated. The second wafer at the same time forms a cover for the first wafer.

An optical amplification method which includes a spectral filtering method for selecting one of several pre-recorded spectral filter patterns and applies this filter to the spectral distribution of a multi-wavelength optical signal transmitted from an input to an output fiber. Optical filtering may be accomplished using free-space bulk optical diffractive wavelength demultiplexing, combined with a fixed (permanent) spatial pattern located in the spectrally dispersed image plane, to transfer to the optical output fiber the input signal with its spectrum selectively attenuated.

The invention aims at providing an infrared-ray absorption film having a low reflection factor and a high absorption ratio equivalent to those of gold black through an economical process such as ink jet printing involving the steps of printing a porous material solution and then conducting sintering without using a vacuum process. The invention provides an infrared-ray absorption film using a porous material which suitably has a pore size within the range of hundreds of nm to several μm and is formed of a metal oxide of carbon or silica, an organic/inorganic hybrid material or a meso-porous material having the composition described above. The infrared-ray absorption film is produced by applying the porous material precursor solution onto a substrate and then conducting sintering.