Gallium nitride-base infrared visable wavelength conversion detector

[0017] The following is an example of an infrared-visible wavelength conversion detector coupled in series with an N-type QWIP and a green LED, wherein the infrared absorption peak of the N-type QWIP is set at around 2.9 microns, and the peak wavelength of the EL spectrum of the LED is at 525nm. The figure further elaborates the specific embodiment of the present invention:

[0018] The detector of the present invention is a typical technology utilizing semiconductor material epitaxy, such as molecular beam epitaxy technology, metal organic chemical vapor deposition technology, etc., in Al 2 o 3 Sequential growth on the sapphire substrate 1:

[0019] n*-GaN lower electrode layer 2;

[0020] Alternate growth of 50 cycles of 10nm thick Al 0.35 Ga 0.65 N barrier layer (51 layers) and 3.5nm thick GaN potential well layer (50 layers), wherein the doping concentration in the GaN quantum well is 8*10 17 cm -3 , thereby forming an infrared detector 3 with multiple quantum wells;