GaN-based semiconductor device and manufacturing method thereof

A gallium nitride-based, manufacturing method technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of unsatisfactory grounding effects, affecting device reliability, and bubbling of conductive metal layers, etc. problem, to achieve the effect of preventing the metal layer on the back from bubbling or even falling off, good grounding effect, and reducing metal back-sputtering

Pending Publication Date: 2020-11-03
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for improved performance of Galium Nitride (Ga3/Al), which has been used previously due to its high melting point and low thermal conductivity compared to other materials like silicone rubber). Additionally, it provides better electrical insulation properties than previous methods while also reducing damage from tunnelling current flow. Overall, these technical improvements improve the overall quality and durability of galliumnanide based devices.

Problems solved by technology

This patents discusses how current methods for connecting electronic parts require solder connections between wires and terminal pads during manufacturing processes due to issues like insufficient bond strength at edges near the bottom of the wafer's surface caused by imperfections along its way from previous designs towards improved design solutions.

Method used

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  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof

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Embodiment Construction

[0036] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.

[0037] Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill

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Abstract

The invention discloses a GaN-based semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductor devices. The GaN-based semiconductor device comprises asubstrate, and a GaN-based epitaxial layer and a dielectric layer which are sequentially formed on the substrate, wherein a deposition hole is formed in the dielectric layer, a front metal layer is filled in the deposition hole, a back through hole is formed in the substrate, and the back through hole penetrates through the GaN-based epitaxial layer; a back metal layer is deposited at the side, away from the GaN-based epitaxial layer, of the substrate and in the back through hole, and back metal in the back through hole is in contact connection with the front metal layer and the dielectric layer separately. According to the GaN-based semiconductor device, the adhesion of back metal can be improved, so that the reliability of the device is improved.

Description

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Claims

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Application Information

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Owner XIAMEN SANAN INTEGRATED CIRCUIT
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