Method for preparing zinc oxide nanowire film

[0045] 4), preparation of suspension

[0046] The surface-modified zinc oxide nanowires are placed in deionized water and ultrasonically dispersed to obtain a uniform suspension; the mass-volume ratio of the surface-modified zinc oxide nanowires to deionized water is 0.2-0.5 mg / mL. The time of ultrasonic treatment is 1~3h, and the power density is 60~100W / m 2 , The frequency of ultrasonic waves is 40-80kHz.

[0047] 5) Self-assembly of ZnO nanowires

[0048] The silicon wafer with the silicon dioxide layer that has undergone hydrophilic treatment is placed in a uniform suspension solution and left to stand to obtain a zinc oxide nanowire film. The time used for standing still is 2~24h.

[0052] Put a silicon wafer with a silicon dioxide layer with a specification of 3 into 50 ml of acetone, at an ultrasonic frequency of 60KHz and a power density of 80W / m 2 Under the conditions of ultrasonic cleaning for 10 minutes, take it out and dry it with nitrogen; then, put the silicon wafer with the silicon dioxide layer into 50 ml of ethanol, at the ultrasonic frequency of 60KHz, the ultrasonic power density of 80W / m 2 Under the condition of ultrasonic cleaning for 10 minutes, take it out and dry it with nitrogen gas; finally put the silicon wafer with silicon dioxide layer into 100 ml of deionized water, at the ultrasonic frequency of 60KHz and the ultrasonic power density of 80W / m 2 Ultrasonic cleaning was performed for 10 minutes under certain conditions, and then it was taken out and blown dry with nitrogen gas.

[0053] With a concentration of 30wt% sulfuric acid solution and 98wt% hydrogen peroxide solution, the volume ratio of the sulfuric acid solution to the

[0059] Put a silicon wafer with a silicon dioxide layer with a specification of 3 into 50 ml of acetone, when the frequency of the ultrasonic wave is 60KHz, and the power density of the ultrasonic wave is 80W / m 2 Under the conditions of ultrasonic cleaning for 10 minutes, take it out and dry it with nitrogen; then, put the silicon wafer with the silicon dioxide layer into 50 ml of ethanol, at the ultrasonic frequency of 60KHz, the ultrasonic power density of 80W / m 2 Under the condition of ultrasonic cleaning for 10 minutes, take it out and dry it with nitrogen gas; finally put the silicon wafer with silicon dioxide layer into 100 ml of deionized water, at the ultrasonic frequency of 60KHz and the ultrasonic power density of 80W / m 2 Ultrasonic cleaning was performed for 10 minutes under certain conditions, and then it was taken out and blown dry with nitrogen gas.

[0060] Be that the sulfuric acid solution with concentration 30wt% and concentration be the hydrogen peroxide