Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and preparation method thereof

A ceramic material and oxide technology, applied in the field of BiCu1-xSeO-based oxide thermoelectric ceramic materials and their preparation, can solve the problems of complex sintering process, cumbersome process cost, etc., and achieve low sintering temperature, short reaction time, and improved sample performance. Effect

Inactive Publication Date: 2012-08-22
TSINGHUA UNIV
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  • Application Information

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Problems solved by technology

The traditional preparation method of BiCuSeO mostly adopts the solid phase method. Due to the low melting point of Bi and Se metals, the two-step solid phase sintering method is mostly us

Method used

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  • Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and preparation method thereof
  • Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and preparation method thereof
  • Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and preparation method thereof

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Embodiment 1

[0027] Example 1. Preparation of BiCuSeO-based oxide thermoelectric ceramic material

[0028] According to the stoichiometric ratio in BiCuSeO, weigh Bi, Cu, Se and Bi 2 o 3 , after mixing, the mixed material is obtained; the mixed material is placed in a ball mill tank for dry grinding, the rotation speed is 400rpm, and the time is 8h to obtain the precursor powder; the precursor powder is dried at 60°C for 12h; then the powder is put into Spark plasma sintering is carried out in a graphite abrasive tool, the heating rate is controlled to be 300°C / min, the final temperature is 300°C for 6 minutes, and the pressure is 50Mpa; then the heating rate is controlled to be 300°C / min, and the final temperature is 700°C for 8 minutes by discharge plasma sintering , the pressure is 50Mpa, and the BiCuSeO-based oxide thermoelectric ceramic material is obtained.

[0029] The XRD spectrum pattern of the sample prepared by this embodiment is as figure 1 As shown, it can be seen from the

Embodiment 2

[0031] Embodiment 2, preparation BiCu 0.985 SeO-based oxide thermoelectric ceramic materials

[0032] According to BiCu 0.985 Stoichiometric ratio in SeO, weighing Bi, Cu, Se and Bi 2 o 3 , after mixing, the mixed material is obtained; the mixed material is placed in a ball mill tank for dry grinding, the rotation speed is 250rpm, and the time is 2h, to obtain the precursor powder; the precursor powder is dried at 50°C for 24h; then the powder is put into Spark plasma sintering was carried out in a graphite abrasive tool, the heating rate was controlled to be 50°C / min, the final temperature was 200°C for 4 minutes, and the pressure was 30Mpa; then the heating rate was controlled to be 50°C / min, and the final temperature was 600°C for 4 minutes by discharge plasma sintering , the pressure is 30Mpa, to get BiCu 0.985 SeO-based oxide thermoelectric ceramic materials.

[0033] The XRD spectrum pattern of the sample prepared by this embodiment is as figure 1 As shown, it can

Embodiment 3

[0035]Embodiment 3, preparation BiCu 0.975 SeO-based oxide thermoelectric ceramic materials

[0036] According to BiCu 0.975 Stoichiometric ratio in SeO, weighing Bi, Cu, Se and Bi 2 o 3 , after mixing, the mixed material is obtained; the mixed material is placed in a ball mill tank for dry grinding, the rotation speed is 300rpm, and the time is 10h to obtain the precursor powder; the precursor powder is dried at 70°C for 4h; then the powder is put into Spark plasma sintering is carried out in graphite abrasive tools, control the heating rate to 150°C / min, sinter at a final temperature of 250°C for 10 minutes, and a pressure of 40Mpa; then control the heating rate to 150°C / min, and discharge plasma sintering at a final temperature of 650°C for 10 minutes , the pressure is 40Mpa, to get BiCu 0.975 SeO-based oxide thermoelectric ceramic materials.

[0037] The XRD spectrum pattern of the sample prepared by this embodiment is as figure 1 As shown, it can be seen from the f

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Abstract

The invention discloses a Bi Cu 1-x SeO-based oxide thermoelectric ceramic material and a preparation method thereof, wherein x is more than or equal to 0 but less than or equal to 0.1; the preparation method comprises the following steps of: (1) according to the stoichiometric proportion in Bi Cu 1-x SeO, weighing Bi, Cu, Se and Bi2O3, mixing to obtain mixture; (2) grinding the obtained mixture to obtain precursor powder; and (3) carrying out spark plasma sintering on the precursor powder to obtain the Bi Cu 1-x SeO-based oxide thermoelectric ceramic material. The Bi Cu 1-x SeO-based oxide thermoelectric ceramic material not only has higher electrical property, but also maintains lower heat transmission performance and has good thermoelectric transmission performance by introducing Cu defect, thus being a novel high-temperature oxide thermoelectric ceramic material with a wide application prospect. Compared with the common solid phase sintering, the method is short in reaction time, low in sintering temperature and simpler in synthesis process, and can be used for further synthesizing a Bi Cu 1-x SeO-based ceramic sample.

Description

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Claims

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Application Information

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Owner TSINGHUA UNIV
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