Preparation method of gold triangular nanoparticle array and vanadium dioxide film composite embedded structure

A nanoparticle array, vanadium dioxide technology, applied in nanotechnology, metal material coating process, ion implantation plating and other directions, can solve the problem of small wavelength adjustment range of metamaterial absorbers, and achieve suitable for large-scale industrial production, The effect of high absorption efficiency and simple structure

Inactive Publication Date: 2017-02-22
TIANJIN UNIV
View PDF3 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems existing in the prior art, the present invention provides a preparation method of the golden triangle nanopart

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0030] The present invention will be described in detail below with reference to the drawings and specific embodiments.

[0031] The raw materials used in the present invention are all commercially available materials, and the preparation method includes the following steps:

[0032] (1) Cleaning of sapphire substrate:

[0033] The sapphire used is a double-polished sapphire substrate with (001) crystal face, with a thickness of 0.45 mm. Put the sapphire chip into deionized water, acetone and absolute ethanol for 20 minutes ultrasonic cleaning to remove the organic impurities on the surface; then rinse with deionized water, and finally put the sapphire substrate in absolute ethanol for use.

[0034] (2) Preparation of monodisperse SiO 2 Mask layer:

[0035] First, insert the cleaned glass slide obliquely into a certain amount of deionized water, and then use a pipette to remove the 600nm SiO 2 -Anhydrous ethanol solution is dripped onto the drainage sheet and allowed to flow slowly onto t

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a gold triangular nanoparticle array and vanadium dioxide film composite embedded structure. The preparation method comprises six steps of cleaning of a sapphire substrate, preparation of a monodispersion SiO2 mask layer, preparation of a gold triangular nanoparticle array structure, preparation of a vanadium film, preparation of a vanadium dioxide film and preparation of a gold reflection layer. The prepared film consists of the gold triangular nanoparticle array, the vanadium dioxide film and the gold reflection layer; and through adjustment of the preparation sequence, the gold triangular nanoparticle array can be embedded in the vanadium dioxide film to realize adjustment of resonant wavelengths. A film preparation absorber has such advantages as wider adjustment of visible light-near infrared band resonant wavelengths, high absorption efficiency, simple structure and small size, and can be applied to such aspects as light detection, electromagnetic switches and sensors.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products