Preparation method of transparent crystal orientation controllable anatase TiO2 nanotube array thin film
A technology of nanotube array and crystal plane orientation, which is applied in nanotechnology, surface reaction electrolytic coating, ion implantation plating, etc., can solve the problems of incomparability and inability to obtain nanotube array film, etc., and achieve simple operation and increase The effect of transfer rate
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[0018] Example 1
[0019] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;
[0020] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;
[0021] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a
Example Embodiment
[0023] Example 2
[0024] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;
[0025] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;
[0026] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a
Example Embodiment
[0028] Example 3
[0029] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;
[0030] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;
[0031] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a
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