Preparation method of transparent crystal orientation controllable anatase TiO2 nanotube array thin film

A technology of nanotube array and crystal plane orientation, which is applied in nanotechnology, surface reaction electrolytic coating, ion implantation plating, etc., can solve the problems of incomparability and inability to obtain nanotube array film, etc., and achieve simple operation and increase The effect of transfer rate

Inactive Publication Date: 2018-09-28
XINXIANG UNIV +1
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above methods are not comparable, at the same time, transparent TiO wi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] Example 1

[0019] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;

[0020] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;

[0021] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a

Example Embodiment

[0023] Example 2

[0024] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;

[0025] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;

[0026] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a

Example Embodiment

[0028] Example 3

[0029] (1) Cut the ITO conductive glass into ITO conductive glass pieces with a size of 10×33mm, and then ultrasonically clean the ITO conductive glass pieces with isopropanol, acetone and anhydrous methanol for 5 minutes, and then dry them with high-purity nitrogen;

[0030] (2) Put the ITO conductive glass sheet into the magnetron sputtering deposition system. Before the sputtering coating starts, the air pressure in the chamber is first pumped to 10 -3 Below mTorr, then fill the chamber with high-purity argon until the pressure reaches 10mTorr. The power used is a radio frequency power supply, the deposition power is 100W, the substrate temperature is 400℃, the DC bias is 10V, and the deposition reaction is 3h on the ITO conductive glass sheet Deposit (002) Ti film with crystal plane orientation;

[0031] (3) In the two-electrode system, the Pt electrode is used as the cathode, and the ITO conductive glass sheet deposited with the Ti film is used as the anode for a

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a transparent crystal orientation controllable anatase TiO2 nanotube array thin film. The preparation method of the transparent crystal orientation controllable anatase TiO2 nanotube array thin film comprises the following steps: depositing a Ti film on ITO conductive glass by a magnetron sputtering deposition process; carrying out anodizing on the Ti film by taking a matrix as an anode and taking a Pt plate as a cathode under the voltage being 40V until the Ti film is transparent; and placing an ITO conductive glass plate deposited with an amorphous TiO2 nanotube array thin film in a tube furnace and carrying out annealing treatment on the ITO conductive glass plate. Transparent TiO2 nanotube array thin films with different crystal orientations can be obtained by carrying out anodizing on the same Ti films under different electrolyte compositions. The prepared monocrystalline anatase TiO2 nanotube array thin film has good photoelectric converting efficiency, and the preparation method is high in controllability, high in efficiency and simple to operate.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Owner XINXIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products