Matrix self-cleaning method in CVD diamond deposition process

A deposition process, diamond technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems that the substrate cannot be 100% clean, low nucleation density, poor film quality, etc., to improve Nucleation rate, no surface defects, full grain effect

Inactive Publication Date: 2018-11-16
四川纳涂科技有限公司
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Benefits of technology

In this new way it uses an electrochemically reactive gas during wafer processing for improved performance without damaging or affecting its properties. It also introduces a layer called protection traces into the treated area where certain atoms form bonds between them, improving adhesiveness while maintaining good crystal orientation. Overall, these technical improvements result in more reliable semiconductor devices made from such wafers.

Problems solved by technology

This patented technical solution described in this patents relates to improving the efficiency and effectiveness of producing thin films made from materials called diamond through various methods like CVD or plasma vapor deposited coatings. While these techniques have their own advantages over traditional ways they still face challenges due to factors including lack of purification standards, poor control over production processes, difficulty controllably adjustable parameters, and potential contamination issues caused by residual solvents present within certain manufacturing environments.

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  • Matrix self-cleaning method in CVD diamond deposition process

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Effect test

Embodiment 1

[0025] The present embodiment provides the substrate self-cleaning method in the CVD diamond deposition process of the present invention, specifically:

[0026] Step 1. Arrange the substrate and hot wire in the CVD vacuum deposition furnace, pump to the ultimate vacuum, and keep it for 5 minutes;

[0027] Step 2. Feed methane and hydrogen into the CVD vacuum deposition furnace; the flow of methane is 50 sccm, the flow of hydrogen is 2000 sccm, and the pressure of the reaction chamber in the CVD vacuum deposition furnace can be adjusted to 3KPa through a regulating valve.

[0028] Step 3. Light up the heating wire, and after the voltage of the heating wire is increased to 40V, observe the color change of the heating wire and the substrate color; about 5 minutes after the voltage is increased to the set value, the surface of the substrate produces color patterns, indicating that The graphite has been attached to the surface of the substrate, and crystal nuclei have begun to form;

Embodiment 2

[0032] The present embodiment provides the substrate self-cleaning method in the CVD diamond deposition process of the present invention, specifically:

[0033] Step 1. Arrange the substrate and hot wire in the CVD vacuum deposition furnace, pump to the ultimate vacuum, and keep it for 3 minutes;

[0034] Step 2. Feed methane and hydrogen into the CVD vacuum deposition furnace; the flow of methane is 80 sccm, the flow of hydrogen is 3000 sccm, and the pressure of the reaction chamber in the CVD vacuum deposition furnace can be adjusted to 2KPa through a regulating valve.

[0035] Step 3. Light up the heating wire, and after the voltage of the heating wire is increased to 30V, observe the color change of the heating wire and the substrate color; about 5 minutes after the voltage is raised to the set value, the surface of the substrate produces color patterns, indicating that The graphite has been attached to the surface of the substrate, and crystal nuclei have begun to form;

[

Embodiment 3

[0039] The present embodiment provides the substrate self-cleaning method in the CVD diamond deposition process of the present invention, specifically:

[0040] Step 1. Arrange the substrate and hot wire in the CVD vacuum deposition furnace, pump to the ultimate vacuum, and keep it for 8 minutes;

[0041] Step 2. Feed methane and hydrogen into the CVD vacuum deposition furnace; the flow of methane is 30 sccm, the flow of hydrogen is 1500 sccm, and the pressure of the reaction chamber in the CVD vacuum deposition furnace can be adjusted to 4KPa through a regulating valve.

[0042] Step 3. Light up the heating wire, and after the voltage of the heating wire is increased to 50V, observe the color change of the heating wire and the substrate color; about 5 minutes after the voltage is raised to the set value, the surface of the substrate produces color lines, indicating that The graphite has been attached to the surface of the substrate, and crystal nuclei have begun to form;

[004

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Abstract

The invention discloses a matrix self-cleaning method in a CVD diamond deposition process and solves the problems of the prior art that the matrix cannot be cleaned completely and consequently nucleation is difficult, nucleation density is low and film forming quality is bad. The matrix self-cleaning method comprises the following steps: arranging the matrix and hot filament in a CVD vacuum deposition furnace, pumping air till ultimate vacuum, and introducing methane and hydrogen; lightening the hot filament; after the voltage of the hot filament is increased to a set value, observing the color change of the hot filament and the matrix; after lathe work is generated on the matrix surface, shutting off the methane, and reducing the hydrogen flow while introducing argon; when the lathe workon the matrix surface gradually disappears, the matrix color becomes bright red and the temperature sensor shows that the matrix temperature is between 600 DEG C and 900 DEG C, shutting off the argonand starting normal coating operation. The method disclosed by the invention is scientific and easy to operate, and can realize a matrix self-cleaning effect, increase the nucleation rate and improvethe film forming quality while creating a protective controllable reaction atmosphere.

Description

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Claims

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Application Information

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Owner 四川纳涂科技有限公司
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