High-linearity radio frequency power amplifier

A power amplifier, radio frequency power technology, applied in power amplifiers, amplifiers with multiple amplifying elements, etc., can solve the problem of the lack of linearity requirements of radio frequency power amplifiers without good linearization means, and achieve the effect of improving linearity

Pending Publication Date: 2020-05-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, RF power amplifiers using CMOS devices do not have go

Method used

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  • High-linearity radio frequency power amplifier
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  • High-linearity radio frequency power amplifier

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[0029] The technical solutions in the present application will be described clearly and completely in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of them. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of this application.

[0030] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the pointed device or element must have a specific orientation or a specific orientation. The str

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Abstract

The invention discloses a high-linearity radio frequency power amplifier, and relates to the field of radio frequency front-end integrated circuits. The high-linearity radio frequency power amplifiercomprises an excitation amplifier and two power amplifiers, wherein the excitation amplifier and the two power amplifiers are arranged between a radio frequency input end and a radio frequency outputend; the excitation amplifier is connected with the power amplifiers; each power amplifier comprises two cascode amplifiers; the gate electrode of the cascode amplifier in the first power amplifier isconnected with a first bias voltage; the gate electrode of the cascode amplifier in the second power amplifier is connected with a second bias voltage; the first bias voltage is different from the second bias voltage; a gate electrode of a common-gate amplifier in the first power amplifier is connected with a third bias voltage; the gate electrode in the second power amplifier is connected with the fourth bias voltage; and the third bias voltage and the fourth bias voltage are different. The problem that an existing radio frequency power amplifier is difficult to meet the strict linearity requirement is solved, and the effect of improving the linearity of the radio frequency power amplifier is achieved.

Description

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Claims

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Application Information

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Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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