Mixer of direct-conversion RF receiver

A technology of radio frequency receiver and mixer, which is applied in the field of direct conversion radio frequency receiver, can solve the problems of post-stage circuit saturation, DC voltage offset, signal line asymmetry, etc., and achieve the effect of improving performance and linearity

Active Publication Date: 2006-02-08
VIA TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It not only distorts the desired signal, but also may cause saturation of the subsequent circuit
Even setting aside common problems such as component mismatch or signal line asym

Method used

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Examples

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Example Embodiment

[0054] The present invention provides a mixer of a direct conversion radio frequency receiver manufactured by a complementary metal oxide semiconductor (CMOS) process. The mixer includes a gain circuit, a conversion circuit and a load circuit.

[0055] If according to figure 1 From the structure diagram, the circuit provided by the present invention and the scope of protection applied for belong to figure 1 The mixer 16a (or 16b). It is particularly worth mentioning that in the front-end circuit of the direct conversion radio frequency receiver 10, the circuit structure of the low noise amplifier 14 is similar to the gain circuit of the present invention, but the two are not the same.

[0056] Please refer to figure 2 , figure 2 It is a circuit diagram of an embodiment of the present invention. As described above, the mixer 30 includes the gain circuit 32, the conversion circuit 34, and the load circuit 36. The gain circuit 32 receives a differential type of radio frequency signa

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PUM

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Abstract

Disclosed is a mixing device of a direct conversion radio frequency receiver, which comprises gain circuit, load circuit and conversion circuit. The gain circuit receives difference RF signals to generate first gain signal. The conversion circuit mixes the first gain signal and local oscillation signal for directly fall down frequency to generate modulating signal. The load circuit comprises a pair of first transistors, a pair of second transistors and a pair of resistance units. The resistance units provide gain parameters. The first transistors provide low resistance to make the modulation signal input into the load circuit. The second transistors provide high resistance to lead the modulation signal inputting to load circuit to the resistance units and output second gain signal that meets the gain parameters. The second transistors are one-direction npn bipolar transistor for exploiting metallic oxide semiconductor structures.

Description

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Claims

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Application Information

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Owner VIA TECH INC
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