Processing method of large-size sapphire panel for unmanned aerial vehicle

A processing method, a sapphire technology, applied in chemical instruments and methods, the seed crystal remains in the molten liquid during growth, the growth of single crystals, etc., can solve the problem of low profit, poor shrinkage, inability to improve the fracture resistance of sapphire panels, etc. problems, to achieve the effect of improving purity, prolonging service life and improving fracture resistance

Inactive Publication Date: 2020-08-11
TDG YINXIA NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology allows for better quality sapphires with improved resistance against flaw damage during use without compromising their durability or lifespan. It also ensures reliable connections between different parts of these materials while maintaining stability over long periods of usage.

Problems solved by technology

This technical problem addressed in this patented text relates to improving the quality of saphire screens used on defense equipment such as tactical radar displays or missile domes that are costly due to their heavy weight.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A method for processing a large-size sapphire panel for an unmanned aerial vehicle, comprising the following steps:

[0027] S1, using the Kyropoulos method to process the growing sapphire single crystal, the steps of the Kyropoulos method are as follows:

[0028] M1. The sapphire seed crystal is clamped by the metal body rod, and at the same time, the sapphire seed crystal is immersed in the crucible, and the crucible is heated. The temperature just passed is heated to 2000 degrees Celsius, and the inner lower end of the crucible is covered with oxidation in a molten state. Aluminum, the surface height of its alumina is higher than the melting point of the seed crystal, and a small amount of the seed crystal is dissolved so that the sapphire single crystal can grow on the surface of the seed crystal;

[0029] M2. After the seed crystal and the melt are completely infiltrated, the surface temperature of the melt is kept at the melting point of the seed crystal, and the see

Embodiment 2

[0042] A method for processing a large-size sapphire panel for an unmanned aerial vehicle, comprising the following steps:

[0043] S1, using the Kyropoulos method to process the growing sapphire single crystal, the steps of the Kyropoulos method are as follows:

[0044] M1. The sapphire seed crystal is clamped by the metal rod, and at the same time, the sapphire seed crystal is immersed in the crucible, and the crucible is heated. The temperature just passed is heated to 2250 degrees Celsius, and the inner and lower ends of the crucible are covered with oxidation in a molten state. Aluminum, the surface height of its alumina is higher than the melting point of the seed crystal, and a small amount of the seed crystal is dissolved so that the sapphire single crystal can grow on the surface of the seed crystal;

[0045] M2. After the seed crystal and the melt are completely infiltrated, the surface temperature of the melt is kept at the melting point of the seed crystal, and the se

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Abstract

The invention relates to the technical field of sapphire panel processing, and discloses a processing method of a large-size sapphire panel for an unmanned aerial vehicle, which comprises the following steps: processing sapphire crystals by a kyropoulos method, bonding the sapphire crystals, and finally processing the surfaces of the sapphires. According to the method, the purity of the sapphirescan be effectively improved, meanwhile, the weld joint connection at the splicing positions of the sapphires is stable, the requirement of a large-size sapphire panel is met, the anti-fracture effectof the sapphire panel can be improved, and the service life of the sapphire panel is prolonged.

Description

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Claims

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Application Information

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Owner TDG YINXIA NEW MATERIAL CO LTD
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