Silicon wafer processing method and silicon wafer

The invention provides a silicon wafer processing method and a silicon wafer. The silicon wafer processing method comprises the following steps of detecting a first defect parameter of a local light scattering defect of a target silicon wafer, under the condition that the first defect parameter is greater than a first defect threshold, detecting a second defect parameter of an uncleanable defect in the local light scattering defects, and under the condition that the second defect parameter is greater than a second defect threshold, marking the target silicon wafer as a silicon wafer to be reversely polished. According to the embodiment of the invention, the silicon wafers of which the local light scattering defects are greater than the first defect threshold value and the uncleanable defects in the local light scattering defects are greater than the second defect threshold value are subjected to reverse polishing treatment, so that the number of defects existing in the target silicon wafer is reduced or reduced, and the defects existing in the silicon wafers can be effectively eliminated; and the excessive treatment waste process is avoided, and the rework cost is saved.