Formation method of semiconductor structure

The invention discloses a forming method of a semiconductor structure. The forming method comprises the steps of providing a substrate; forming a core layer on the substrate; ion doping is carried out on the core layer of the sacrificial region, so that the etching rates of the core layer of the sacrificial region and the core layer of the anti-etching region are different, the core layer doped with ions is used as a sacrificial layer, and the core layer not doped with ions is used as an anti-etching layer; forming a groove penetrating through the core layer between the adjacent sacrificial regions; side walls are formed on the side walls of the groove, and the side walls located on the side walls of the groove define a first groove; the sacrificial layer is removed through an etching process, a second groove penetrating through the anti-etching layer is formed, and the etching rate of the etching process on the sacrificial layer is larger than that of the anti-etching layer; and etching the target layer at the bottoms of the first groove and the second groove by taking the anti-etching layer and the side wall as masks to form a target pattern. According to the embodiment of the invention, the pattern precision of the target pattern and the matching degree of the target pattern and the design pattern can be improved.