Semiconductor Metrology And Inspection Based On An X-Ray Source With An Electron Emitter Array

Pending Publication Date: 2021-08-05
KLA TENCOR CORP
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Benefits of technology

[0029]Elements of an X-ray source including the electron emitter array, the electron beam, and the anode are maintained in a vacuum environment within a vacuum chamber. In some embodiments, vacuum chamber 120 is sealed and evacuated during manufacturing. In another further aspect, the vacuum at the electron emitter array is maintained at a lower pressure than the vacuum at the anode. In some embodiments, the vacuum environment at the electron emitter array is maintained at a pressure of 10−9 Torr, or lower. To achieve this pressure differential, one or more barriers are fabricated between the electron emitter array and the anode. In some embodiments, each barrier includes a small aperture through which the electron beam passes. In some other embodiments, a thin metal foil is located across each aperture to stop gas flow. The thin metal foil does not significantly impede the current flow of electron beam, but effectively stops gas flow through each barrier.
[0030]In another further aspect, the anode is configured to transmit heat away from the

Problems solved by technology

Nonetheless, optical metrology and inspection are not suitable in all situations.
As devices (e.g., logic and memory devices) move toward smaller nanometer-scale dimensions, characterization becomes more difficult.
Devices incorporating complex three-dimensional geometry and materials with diverse physical properties contribute to characterization difficulty.
For example, modern memory structures are often high-aspect ratio, three-dimensional structures that make it difficult for optical radiation to penetrate to the bottom layers.
As a result, the parameters characterizing the target often cannot be reliably decoupled with available measurements.
Optical radiation is often unable to penetrate layers constructed of these materials.
As a result, measurements with thin-film scatterometry tools such as ellipsometers or reflectometers are becoming increasingly challenging.
In response, more complex optical tools have been developed.
However, these approaches have not reliably overcome fundamental challenges associated with measurement of many advanced targets (e.g., complex 3D structures, structures smaller than 10 nm, structures employing opaque materials) and measurement applications (e.g., line edge roughness and line width roughness measurements).
Atomic force microscopes (AFM) and scanning-tunneling microscopes (STM) are able to achieve atomic resolution, but they can only probe the surface of the specimen.
In addition, AFM and STM microscopes require long scanning times. Scanning electron microscopes (SEM) achieve intermediate resolution levels, but are unable to penetrate structures to sufficient depth.
Thus, high-aspect ratio holes are not characterized well.
In addition, the required chargin

Method used

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Example

[0042]Reference will now be made in detail to background examples and some embodiments of the invention, examples of which are illustrated in the accompanying drawings.

[0043]Methods and systems for realizing a high radiance x-ray source suitable for high throughput x-ray metrology and inspection based on a high density electron emitter array are presented herein. The high radiance x-ray source enables measurement of structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, defects, etc.) associated with different semiconductor fabrication processes.

[0044]In one aspect, a high radiance X-ray source includes an array of electron emitters that generate a large electron current focused over a small anode area to generate high radiance X-ray illumination light. In some embodiments, electron current density across the surface of the electron emitter array is at least 0.01 Amperes / mm2. Furthermore, the electron current is focus

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Abstract

Methods and systems for realizing a high radiance x-ray source based on a high density electron emitter array are presented herein. The high radiance x-ray source is suitable for high throughput x-ray metrology and inspection in a semiconductor fabrication environment. The high radiance X-ray source includes an array of electron emitters that generate a large electron current focused over a small anode area to generate high radiance X-ray illumination light. In some embodiments, electron current density across the surface of the electron emitter array is at least 0.01 Amperes/mm2, the electron current is focused onto an anode area with a dimension of maximum extent less than 100 micrometers, and the spacing between emitters is less than 5 micrometers. In another aspect, emitted electrons are accelerated from the array to the anode with a landing energy less than four times the energy of a desired X-ray emission line.

Description

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Claims

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Application Information

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Owner KLA TENCOR CORP
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