Spintronics element and magnetic memory device

[0025]Exemplary embodiments of the present invention will be described below with reference to the drawings. The same reference signs are used to designate the same or similar components throughout the drawings.

[0026]Ferromagnets exhibit a relatively large magnetization, and thus have been used extensively as key components of various devices including motors, power generators, magnetic sensors, and magnetic memories. Antiferromagnets, on the other hand, exhibit a very tiny magnetization, show an extremely small response, and are hard to control as opposed to ferromagnets, which leads to limited applications.

[0027]In recent years, spintronics for magnetic memories has required high density and high-speed processing. A memory cell with an antiferromagnetic component produces almost no stray fields because of a tiny magnetization described above. Therefore, antiferromagnets would be suitable for use in high-density magnetic memories. Moreover, antiferromagnets typically have a resonant f