4 results about "Avalanche breakdown" patented technology

The invention provides an insulated gate bipolar transistor (IGBT) with a floating buried layer, belonging to the power semiconductor device technology field. According to the invention, based on a traditional IGBT device structure, a drift region with a first conductive type is introduced with one or more layers of continuous or incontinuous second conductive type floating buried layers, through a modulation effect of introduced space charge and additional electric field of the second conductive type floating buried layer, new electric field peak is introduced into the drift region of the first conductive type, and with a same device drift region thickness, breakdown voltage of an IGBT device is substantially raised; with certain breakdown voltage, an IGBT device drift region thickness can be substantially reduced, thus forward conduction voltage drop and shutoff time of the device are substantially reduced. Simultaneously, with an effect of introduced space charge of the floating buried layer, avalanche breakdown in device shutoff can be inhibited, and dynamic breakdown voltage and reverse direction safety operation area of the IGBT device are improved.

The invention discloses a mercury cadmium telluride avalanche diode detector capable of modulating a surface energy band. By adding an electrode above a passivation layer of a pn junction depletion region, the pn junction energy band at the interface between the passivation layer and the mercury cadmium telluride can be modulated, and the pn junction at the interface between the passivation layerand the mercury cadmium telluride tends to be flat, thereby suppressing surface generation-recombination, surface tunneling, and surface leakage currents. The detector has the advantages that the surface energy band of the pn junction region can be modulated to be flat, and the surface leakage current is suppressed to enable the diode to work in the Geiger mode under the reverse large bias voltage, which is advantageous for solving the problem that the mercury cadmium telluride avalanche diode device of the conventional structure may have large leakage current at the surface when the reverse bias voltage is greater than the avalanche breakdown voltage, causes the photodiode to undergo thermal-electric breakdown, and limits signal detection in a linear mode.